January 2009: IMS awarded NASA Phase I for InGaN High Temperature Photovoltaic Cells
IMS, Inc.has been awarded a Phase I SBIR to investigate the use of InGaN as high temperature solar cells for NASA.
This project stems from remarkable observations made during an unrelated
NIH proposal
Project Title:InGaN High Temperature Photovoltaic Cells
Summary:This project seeks to
demonstrate that InGaN materials are appropriate for high operating temperature
single junction solar cells. Single junction InGaN devices would be especially
beneficial to missions near the sun and those in high radiation environments.
During this project, IMS will fabricate and test structures optimized for
operation at temperatures above 100ºC.
IMS has been awarded a DOE SBIR Phase I grant for the development, fabrication, and testing of Photo-Enhanced Hardened Flat Cold Cathodes Based on III Nitride.
IMS inc. Awarded NSF Phase I Award for: Metamaterials for Giant Dielectrics and Energy
The SBIR proposal seeks to develop polymer coated conducting nanoparticles that will be used as dielectrics composite in high energy storage capacitors.
